SIDC11D60SIC3Description Description_SIDC11D60SIC3Specifications

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	4A (DC)
Voltage - Forward (Vf) (Max) @ If	1.9 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 600 V
Capacitance @ Vr, F	150pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Sawn on foil
Operating Temperature - Junction	-55°C ~ 175°C

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Price advantage, SIDC11D60SIC3 is available in stock and can be delivered on the same day

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