2N2480ADescription Description_2N2480ASpecifications_Central Semiconductor Corp-www.samsong.com

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max)	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1mA, 5V
Power - Max	600mW
Frequency - Transition	50MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Supplier Device Package	TO-78-6

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