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Transistors - Bipolar - Arrays
PBSS4230PAN,115 Picture

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PBSS4230PAN,115

  • NXP USA Inc.
  • New
  • NOW NEXPERIA PBSS4230PAN - SMALL
  • Datasheet download
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In Stock:18,288(Ref. price)
Qty.Unit PriceExt. Price
1
$0.11760
$0.11760
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
-
Current - Collector (Ic) (Max)
2A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
290mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
510mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
6-HUSON-EP (2x2)
Other
Price advantage, PBSS4230PAN,115 is available in stock and can be delivered on the same day
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