SMA6080Description Description_SMA6080Specifications

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	3 NPN, 3 PNP Darlington (3-Phase Bridge)
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 2mA, 1A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 4V
Power - Max	4W
Frequency - Transition	50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	12-SIP
Supplier Device Package	12-SIP

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