IMD23T108Description Description_IMD23T108Specifications

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	1kOhms, 10kOhms
Resistor - Emitter Base (R2)	10kOhms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V, 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 2.5mA, 300mV @ 10mA, 500µA
Current - Collector Cutoff (Max)	-
Frequency - Transition	200MHz, 250MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SMT6

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