NESG2101M05-ADescription Description_NESG2101M05-ASpecifications

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	17GHz
Noise Figure (dB Typ @ f)	0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain	11dB ~ 19dB
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	130 @ 15mA, 2V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	M05

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Price advantage, NESG2101M05-A is available in stock and can be delivered on the same day

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