MDS500LDescription Description_MDS500LSpecifications_Microsemi Corporation-www.samsong.com

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,192(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	70V
Frequency - Transition	1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)	-
Gain	9.2dB
Power - Max	833W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1A, 5V
Current - Collector (Ic) (Max)	24A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55ST
Supplier Device Package	55ST

Other

Price advantage, MDS500L is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NE68530-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 6V 12GHZ SOT323	No price	In Stock:19016
PH3135-20M	MACOM Technology Solutions	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 65V	$176.37023	In Stock:19018
1517-110M	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 70V 1.65GHZ 55AW-1	No price	In Stock:19020
DME500	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 55V 1.15GHZ 55KT	No price	In Stock:19024
MS2392	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:19028