AT-64020Description Description_AT-64020Specifications

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	3W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 110mA, 8V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD (200 mil BeO)
Supplier Device Package	-

Other

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