NE687M33-ADescription Description_NE687M33-ASpecifications

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3V
Frequency - Transition	12GHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2dB @ 2GHz
Gain	-
Power - Max	90mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 1V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	3-SuperMiniMold (M33)

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Price advantage, NE687M33-A is available in stock and can be delivered on the same day

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