MRF559GDescription Description_MRF559GSpecifications_Microsemi Corporation-www.samsong.com

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	16V
Frequency - Transition	870MHz
Noise Figure (dB Typ @ f)	-
Gain	9.5dB
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	Micro-X ceramic (84C)
Supplier Device Package	Micro-X ceramic (84C)

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Price advantage, MRF559G is available in stock and can be delivered on the same day

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