MAX2601ESADescription Description_MAX2601ESASpecifications

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1GHz
Noise Figure (dB Typ @ f)	3.3dB @ 836MHz
Gain	11.6dB
Power - Max	6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 250mA, 3V
Current - Collector (Ic) (Max)	1.2A
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package	8-SOIC-EP

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