1214-30Description Description_1214-30Specifications_Microsemi Corporation-www.samsong.com

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,038(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Frequency - Transition	1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f)	-
Gain	7dB
Power - Max	88W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 5V
Current - Collector (Ic) (Max)	4A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55AW
Supplier Device Package	55AW

Other

Price advantage, 1214-30 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MS2200A	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:17556
BFP740E6327	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANSISTOR, X BAND, NPN	$0.30070	In Stock:32508
MMBTH10RG	Fairchild Semiconductor	Transistors - Bipolar - RF	Datasheet	RF 0.05A, ULTRA HIGH FREQ BAND	$0.05820	In Stock:394010
BFP405FH6327XTSA1	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	BFP405 - LOW-NOISE SI TRANSISTOR	$0.11880	In Stock:17562
BFM505,115	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	TRANS NPN DUAL 8V 9GHZ 6TSSOP	$0.37240	In Stock:91050