NE85639R-T1Description Description_NE85639R-T1Specifications

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2.1dB @ 1GHz
Gain	13.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-143R
Supplier Device Package	SOT-143R

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