2SA1977-T1B-ADescription Description_2SA1977-T1B-ASpecifications_Renesas Electronics America Inc-www.samsong.com

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8.5GHz
Noise Figure (dB Typ @ f)	1.5dB @ 1GHz
Gain	12dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 20mA, 8V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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Price advantage, 2SA1977-T1B-A is available in stock and can be delivered on the same day

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