2SD2560Description Description_2SD2560Specifications

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	15 A
Voltage - Collector Emitter Breakdown (Max)	150 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 10mA, 10A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	5000 @ 10A, 4V
Power - Max	130 W
Frequency - Transition	70MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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