2SB1570Description Description_2SB1570Specifications

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	150 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 7mA, 7A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	5000 @ 7A, 4V
Power - Max	150 W
Frequency - Transition	50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-ESIP
Supplier Device Package	MT-200

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