FA4F4M-T1B-ADescription Description_FA4F4M-T1B-ASpecifications_Renesas Electronics America Inc-www.samsong.com

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	22 Ohms
Resistor - Emitter Base (R2)	22 Ohms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 250µ, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	-
Power - Max	200 mW
Mounting Type	-
Package / Case	-
Supplier Device Package	-

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Price advantage, FA4F4M-T1B-A is available in stock and can be delivered on the same day

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