RN1444ATE85LFDescription Description_RN1444ATE85LFSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	20 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 4mA, 2V
Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	30 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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