UNR412200ADescription Description_UNR412200ASpecifications_Panasonic Electronic Components-www.samsong.com

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	200 MHz
Power - Max	300 mW
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	NS-A1

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Price advantage, UNR412200A is available in stock and can be delivered on the same day

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