RN1111MFV,L3FDescription Description_RN1111MFV,L3FSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

Transistors - Bipolar - Pre-Biased

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In Stock：18,994(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	-
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM

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Price advantage, RN1111MFV,L3F is available in stock and can be delivered on the same day

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