IPG16N10S4L61AATMA1Description Description_IPG16N10S4L61AATMA1Specifications

MOSFETs - Arrays

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In Stock：25,167(Ref. price)

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Specifications

Description	Details
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	16A
Rds On (Max) @ Id, Vgs	61mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	845pF @ 25V
Power - Max	29W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-10

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