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MOSFETs - Arrays
EPC2100 Picture

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EPC2100

  • EPC
  • New
  • GAN TRANS ASYMMETRICAL HALF BRID
  • Datasheet download
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In Stock:1,334(Ref. price)
Qty.Unit PriceExt. Price
1
$6.59300
$6.59300
Documents
Specifications
DescriptionDetails
Series
eGaN®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Other
Price advantage, EPC2100 is available in stock and can be delivered on the same day
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