SIA533EDJ-T1-GE3Description Description_SIA533EDJ-T1-GE3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 6V
Power - Max	7.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual

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