GWM160-0055P3Description Description_GWM160-0055P3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	6 N-Channel (3-Phase Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	160A
Rds On (Max) @ Id, Vgs	3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	ISOPLUS-DIL™
Supplier Device Package	ISOPLUS-DIL™

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