HAT2210RWS-EDescription Description_HAT2210RWS-ESpecifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs	24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 10V, 1330pF @ 10V
Power - Max	1.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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