SI3585DV-T1-GE3Description Description_SI3585DV-T1-GE3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A, 1.5A
Rds On (Max) @ Id, Vgs	125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

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