FMM110-015X2FDescription Description_FMM110-015X2FSpecifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	GigaMOS™, HiPerFET™, TrenchT2™
Package	Tube
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	53A
Rds On (Max) @ Id, Vgs	20mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8600pF @ 25V
Power - Max	180W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Supplier Device Package	ISOPLUS i4-PAC™

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