EPC2100ENGRTDescription Description_EPC2100ENGRTSpecifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	eGaN®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 15V, 1960pF @ 15V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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