SI8902EDB-T2-E1Description Description_SI8902EDB-T2-E1Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1V @ 980µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-MICRO FOOT®CSP
Supplier Device Package	6-Micro Foot™ (2.36x1.56)

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