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SI1912EDH-T1-E3 Picture

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SI1912EDH-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET 2N-CH 20V 1.13A SC70-6
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In Stock:17,736(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.13A
Rds On (Max) @ Id, Vgs
280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs
1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
570mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6 (SOT-363)
Other
Price advantage, SI1912EDH-T1-E3 is available in stock and can be delivered on the same day
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