SI1965DH-T1-BE3Description Description_SI1965DH-T1-BE3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	1.14A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs	390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 6V
Power - Max	740mW (Ta), 1.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6

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