SI4501BDY-T1-GE3Description Description_SI4501BDY-T1-GE3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V, 8V
Current - Continuous Drain (Id) @ 25°C	12A, 8A
Rds On (Max) @ Id, Vgs	17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	805pF @ 15V
Power - Max	4.5W, 3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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