SIA938DJT-T1-GE3Description Description_SIA938DJT-T1-GE3Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs	21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
Power - Max	1.9W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual

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