QJD1210SA1Description Description_QJD1210SA1Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	100A
Rds On (Max) @ Id, Vgs	17mOhm @ 100A, 15V
Vgs(th) (Max) @ Id	1.6V @ 34mA
Gate Charge (Qg) (Max) @ Vgs	330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	8200pF @ 10V
Power - Max	520W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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