IRF7751Description Description_IRF7751Specifications_Infineon Technologies-www.samsong.com

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	35mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1464pF @ 25V
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP

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