EPC2108Description Description_EPC2108Specifications

MOSFETs - Arrays

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Specifications

Description	Details
Series	eGaN®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	60V, 100V
Current - Continuous Drain (Id) @ 25°C	1.7A, 500mA
Rds On (Max) @ Id, Vgs	190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id	2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 30V, 7pF @ 30V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	9-VFBGA
Supplier Device Package	9-BGA (1.35x1.35)

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