SI2301S-2.3ADescription Description_SI2301S-2.3ASpecifications

MOSFETs - Single

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Specifications

Description	Details
Series	SOT-23
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 4.5V
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	225mW (Ta)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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