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MOSFETs - Single
FQB2NA90TM Picture

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FQB2NA90TM

  • ON Semiconductor
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  • MOSFET N-CH 900V 2.8A D2PAK
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In Stock:18,324(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
QFET®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.8Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, FQB2NA90TM is available in stock and can be delivered on the same day
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