EPC2019Description Description_EPC2019Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	eGaN®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id	2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	2.5 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die

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