EPC2035Description Description_EPC2035Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	eGaN®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id	2.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs	1.15 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	115 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die

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