SIA850DJ-T1-GE3Description Description_SIA850DJ-T1-GE3Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	LITTLE FOOT®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	190 V
Current - Continuous Drain (Id) @ 25°C	950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	90 pF @ 100 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.9W (Ta), 7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Dual
Package / Case	PowerPAK® SC-70-6 Dual

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