RQJ0305EQDQS#H1Description Description_RQJ0305EQDQS#H1Specifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 4.5 V
Vgs (Max)	+8V, -12V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UPAK
Package / Case	TO-243AA

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