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SISS98DN-T1-GE3 Picture

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SISS98DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 200V 14.1A PPAK
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In Stock:3,185(Ref. price)
Qty.Unit PriceExt. Price
1
$1.10740
$1.10740
Documents
Specifications
DescriptionDetails
Series
ThunderFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 7.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
608 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Other
Price advantage, SISS98DN-T1-GE3 is available in stock and can be delivered on the same day
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