N0600N-S17-AYDescription Description_N0600N-S17-AYSpecifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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In Stock：25,092(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.45600	$0.45600

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	36mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	29.8 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1.38 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 20W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3 Isolated Tab

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