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MOSFETs - Single
SISS63DN-T1-GE3 Picture

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SISS63DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 20V 35.1/127.5A PPAK
  • Datasheet download
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In Stock:56,422(Ref. price)
Qty.Unit PriceExt. Price
1
$0.99750
$0.99750
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen III
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35.1A (Ta), 127.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
236 nC @ 8 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
7080 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Other
Price advantage, SISS63DN-T1-GE3 is available in stock and can be delivered on the same day
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