TK31E60X,S1XDescription Description_TK31E60X,S1XSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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In Stock：18,280(Ref. price)

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Specifications

Description	Details
Series	DTMOSIV-H
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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