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MOSFETs - Single
SCTW70N120G2V Picture

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SCTW70N120G2V

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In Stock:19,152(Ref. price)
Qty.Unit PriceExt. Price
1
$37.55360
$37.55360
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3540 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
547W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Other
Price advantage, SCTW70N120G2V is available in stock and can be delivered on the same day
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