SI4413DDY-T1-GE3Description Description_SI4413DDY-T1-GE3Specifications

MOSFETs - Single

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In Stock：19,370(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	4780 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 125°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

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