IRFP4468PBFDescription Description_IRFP4468PBFSpecifications

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,008(Ref. price)

Qty.	Unit Price	Ext. Price
1	$6.94450	$6.94450

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	540 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	19860 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

Other

Price advantage, IRFP4468PBF is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
DMTH4007LPSQ-13	Diodes Incorporated	MOSFETs - Single	Datasheet	MOSFET N-CH 40V 15.5A PWRDI5060	$1.03550	In Stock:4176
STP120NF10	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 110A TO220AB	$3.48480	In Stock:18996
2SJ438,Q(M	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET P-CH TO220NIS	No price	In Stock:19004
IXKF40N60SCD1	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 41A I4PAC	$17.79131	In Stock:19006
SI5445BDC-T1-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 8V 5.2A 1206-8	No price	In Stock:19008