CTLDM8120-M621H BKDescription Description_CTLDM8120-M621H BKSpecifications_Central Semiconductor Corp-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.56 nC @ 4.5 V
Vgs (Max)	8V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TLM621H
Package / Case	6-XFDFN Exposed Pad

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